Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB IRF540NPBF
技術文件
規格
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
44 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.54mm
Typical Gate Charge @ Vgs
71 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.69mm
Transistor Material
Si
Forward Diode Voltage
1.2V
Height
8.77mm
Minimum Operating Temperature
-55 °C
原產地
China
產品詳情
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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2,256.80 MOP
110.06 MOP Each (In a Pack of 20) (不含稅)
標準
20
2,256.80 MOP
110.06 MOP Each (In a Pack of 20) (不含稅)
暫時無法取得庫存資訊。
標準
20
暫時無法取得庫存資訊。
| 數量 | 單價 |
|---|---|
| 30 - 149 | 110.06 MOP |
| 150+ | 90.58 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
- 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
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- 下載超過一百萬種產品的 3D 模型、原理圖和封裝
技術文件
規格
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
44 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.54mm
Typical Gate Charge @ Vgs
71 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.69mm
Transistor Material
Si
Forward Diode Voltage
1.2V
Height
8.77mm
Minimum Operating Temperature
-55 °C
原產地
China
產品詳情
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
醞釀。 創造。 合作
免費加入
無隱藏費用！
- 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
- 查看網站內容和論壇
- 下載超過一百萬種產品的 3D 模型、原理圖和封裝