Technical Document
Specifications
Channel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
480 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
48 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
27 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.54mm
Width
4.69mm
Height
8.77mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
P.O.A.
Standard
1
P.O.A.
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
Technical Document
Specifications
Channel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
480 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
48 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
27 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.54mm
Width
4.69mm
Height
8.77mm
Series
HEXFET
Minimum Operating Temperature
-55 °C


