IXYS HiperFET, Polar N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P

RS 庫存號: 168-4465品牌: IXYS製造商零件號: IXFH96N20P
brand-logo
查看MOSFETs中的所有內容

技術文件

規格

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

96 A

Maximum Drain Source Voltage

200 V

Series

HiperFET, Polar

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

600 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.3mm

Length

16.26mm

Typical Gate Charge @ Vgs

145 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

21.46mm

產品詳情

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多
You may be interested in

44,715.50 MOP

Each (In a Tube of 30) (不含稅)

IXYS HiperFET, Polar N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P

30

可用的倍數 30
3044,715.50 MOP
6089,430.90 MOP
90134,146.40 MOP
120178,861.80 MOP
150223,577.30 MOP
180268,292.70 MOP
210313,008.20 MOP
240357,723.60 MOP
270402,439.10 MOP
300447,154.60 MOP
330491,870.00 MOP
360536,585.50 MOP
390581,300.90 MOP
420626,016.40 MOP
450670,731.80 MOP

44,715.50 MOP

Each (In a Tube of 30) (不含稅)

IXYS HiperFET, Polar N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P

暫時無法取得庫存資訊。

30

可用的倍數 30
3044,715.50 MOP
6089,430.90 MOP
90134,146.40 MOP
120178,861.80 MOP
150223,577.30 MOP
180268,292.70 MOP
210313,008.20 MOP
240357,723.60 MOP
270402,439.10 MOP
300447,154.60 MOP
330491,870.00 MOP
360536,585.50 MOP
390581,300.90 MOP
420626,016.40 MOP
450670,731.80 MOP

暫時無法取得庫存資訊。

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多
You may be interested in

技術文件

規格

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

96 A

Maximum Drain Source Voltage

200 V

Series

HiperFET, Polar

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

600 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.3mm

Length

16.26mm

Typical Gate Charge @ Vgs

145 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

21.46mm

產品詳情

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多
You may be interested in