IXYS IXGN320N60A3 Single IGBT Module, 320 A 600 V, 4-Pin SOT-227B, Surface Mount
Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
320 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
735 W
Configuration
Single
Package Type
SOT-227B
Mounting Type
Surface Mount
Channel Type
N
Pin Count
4
Switching Speed
5kHz
Transistor Configuration
Common Emitter
Dimensions
38.23 x 25.07 x 9.6mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
3,732.00 MOP
373.196 MOP Each (In a Tube of 10) (ex VAT)
10
3,732.00 MOP
373.196 MOP Each (In a Tube of 10) (ex VAT)
Stock information temporarily unavailable.
10
| quantity | Unit price | Per Tube |
|---|---|---|
| 10 - 40 | 373.196 MOP | 3,731.96 MOP |
| 50+ | 365.735 MOP | 3,657.35 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
320 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
735 W
Configuration
Single
Package Type
SOT-227B
Mounting Type
Surface Mount
Channel Type
N
Pin Count
4
Switching Speed
5kHz
Transistor Configuration
Common Emitter
Dimensions
38.23 x 25.07 x 9.6mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products