Technical Document
Specifications
Brand
IXYSProduct Type
IGBT Module
Configuration
Single
Package Type
Y4-M5
Channel Type
Type N
Pin Count
7
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Width
34 mm
Length
94mm
Height
30mm
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Stock information temporarily unavailable.
3,377.10 MOP
562.842 MOP Each (In a Box of 6) (ex VAT)
6
3,377.10 MOP
562.842 MOP Each (In a Box of 6) (ex VAT)
Stock information temporarily unavailable.
6
| quantity | Unit price | Per Box |
|---|---|---|
| 6 - 6 | 562.842 MOP | 3,377.05 MOP |
| 12 - 18 | 545.959 MOP | 3,275.75 MOP |
| 24+ | 529.574 MOP | 3,177.44 MOP |
Technical Document
Specifications
Brand
IXYSProduct Type
IGBT Module
Configuration
Single
Package Type
Y4-M5
Channel Type
Type N
Pin Count
7
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Width
34 mm
Length
94mm
Height
30mm
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


