Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
225 mA
Maximum Drain Source Voltage
250 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
15 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Maximum Operating Temperature
+150 °C
Width
3.7mm
Height
1.7mm
Minimum Operating Temperature
-65 °C
Country of Origin
China
Product details
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
141.70 MOP
27.62 MOP Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
5
141.70 MOP
27.62 MOP Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
5
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 50 - 99 | 27.62 MOP |
| 100+ | 27.21 MOP |
Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
225 mA
Maximum Drain Source Voltage
250 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
15 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Maximum Operating Temperature
+150 °C
Width
3.7mm
Height
1.7mm
Minimum Operating Temperature
-65 °C
Country of Origin
China
Product details


