Nexperia PBSS5520X,135 PNP Transistor, -5 A, -20 V, 4-Pin UPAK

RS 庫存號: 518-2012品牌: Nexperia製造商零件號: PBSS5520X,135
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技術文件

規格

Transistor Type

PNP

Maximum DC Collector Current

-5 A

Maximum Collector Emitter Voltage

-20 V

Package Type

UPAK

Mounting Type

Surface Mount

Maximum Power Dissipation

2.5 W

Minimum DC Current Gain

300

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

100 MHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

1.6 x 4.6 x 2.6mm

Maximum Operating Temperature

+150 °C

產品詳情

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

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Diodes Inc 2DA1971-7 PNP Transistor, -500 mA, -400 V, 3-Pin SOT-89
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282.00 MOP

Each (In a Pack of 10) (不含稅)

Nexperia PBSS5520X,135 PNP Transistor, -5 A, -20 V, 4-Pin UPAK
選擇包裝類型

282.00 MOP

Each (In a Pack of 10) (不含稅)

Nexperia PBSS5520X,135 PNP Transistor, -5 A, -20 V, 4-Pin UPAK

暫時無法取得庫存資訊。

選擇包裝類型

暫時無法取得庫存資訊。

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多
You may be interested in
Diodes Inc 2DA1971-7 PNP Transistor, -500 mA, -400 V, 3-Pin SOT-89
1,094.18 MOPEach (On a Reel of 1000) (不含稅)

技術文件

規格

Transistor Type

PNP

Maximum DC Collector Current

-5 A

Maximum Collector Emitter Voltage

-20 V

Package Type

UPAK

Mounting Type

Surface Mount

Maximum Power Dissipation

2.5 W

Minimum DC Current Gain

300

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

100 MHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

1.6 x 4.6 x 2.6mm

Maximum Operating Temperature

+150 °C

產品詳情

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多
You may be interested in
Diodes Inc 2DA1971-7 PNP Transistor, -500 mA, -400 V, 3-Pin SOT-89
1,094.18 MOPEach (On a Reel of 1000) (不含稅)