Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
Voltage controlled P-Channel small signal switch
High-Density cell design
High saturation current
Superior switching
Great rugged and reliable performance
DMOS technology
Applications:
Load Switching
DC/DC converter
Battery protection
Power management control
DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
412.70 MOP
80.48 MOP Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
5
412.70 MOP
80.48 MOP Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
5
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 40 - 79 | 80.48 MOP |
| 80+ | 79.25 MOP |
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
Voltage controlled P-Channel small signal switch
High-Density cell design
High saturation current
Superior switching
Great rugged and reliable performance
DMOS technology
Applications:
Load Switching
DC/DC converter
Battery protection
Power management control
DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.


