Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Maximum Drain Source Voltage Vds
0.2V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-40 V
Pin Count
3
Minimum Operating Temperature
-55°C
Maximum Drain Source Resistance Rds
80Ω
Drain Source Current Ids
8 mA
Maximum Operating Temperature
150°C
Width
1.3 mm
Height
0.93mm
Length
2.92mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Stock information temporarily unavailable.
142.40 MOP
2.848 MOP Each (In a Pack of 50) (ex VAT)
Standard
50
142.40 MOP
2.848 MOP Each (In a Pack of 50) (ex VAT)
Stock information temporarily unavailable.
Standard
50
| quantity | Unit price | Per Pack |
|---|---|---|
| 50 - 700 | 2.848 MOP | 142.42 MOP |
| 750 - 1450 | 2.778 MOP | 138.91 MOP |
| 1500+ | 2.735 MOP | 136.75 MOP |
Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Maximum Drain Source Voltage Vds
0.2V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-40 V
Pin Count
3
Minimum Operating Temperature
-55°C
Maximum Drain Source Resistance Rds
80Ω
Drain Source Current Ids
8 mA
Maximum Operating Temperature
150°C
Width
1.3 mm
Height
0.93mm
Length
2.92mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


