Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Maximum Drain Source Voltage Vds
0.2V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Drain Source Resistance Rds
80Ω
Pin Count
3
Drain Source Current Ids
8 mA
Minimum Operating Temperature
-55°C
Maximum Power Dissipation Pd
350mW
Maximum Operating Temperature
150°C
Length
2.92mm
Height
0.93mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Stock information temporarily unavailable.
149.60 MOP
2.993 MOP Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
50
149.60 MOP
2.993 MOP Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
50
| quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 700 | 2.993 MOP | 149.63 MOP |
| 750 - 1450 | 2.918 MOP | 145.92 MOP |
| 1500+ | 2.873 MOP | 143.65 MOP |
Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Maximum Drain Source Voltage Vds
0.2V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Drain Source Resistance Rds
80Ω
Pin Count
3
Drain Source Current Ids
8 mA
Minimum Operating Temperature
-55°C
Maximum Power Dissipation Pd
350mW
Maximum Operating Temperature
150°C
Length
2.92mm
Height
0.93mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


