Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
Switch-N-Channel
Channel Type
Type N
Maximum Drain Source Voltage Vds
20V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Pin Count
3
Drain Source Current Ids
10 to 40 mA
Minimum Operating Temperature
-55°C
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-40 V
Maximum Operating Temperature
150°C
Width
1.3 mm
Length
2.9mm
Height
1.04mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Stock information temporarily unavailable.
87.10 MOP
1.742 MOP Each (In a Pack of 50) (ex VAT)
Standard
50
87.10 MOP
1.742 MOP Each (In a Pack of 50) (ex VAT)
Stock information temporarily unavailable.
Standard
50
| quantity | Unit price | Per Pack |
|---|---|---|
| 50 - 700 | 1.742 MOP | 87.08 MOP |
| 750 - 1450 | 1.698 MOP | 84.91 MOP |
| 1500+ | 1.671 MOP | 83.57 MOP |
Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
Switch-N-Channel
Channel Type
Type N
Maximum Drain Source Voltage Vds
20V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Pin Count
3
Drain Source Current Ids
10 to 40 mA
Minimum Operating Temperature
-55°C
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-40 V
Maximum Operating Temperature
150°C
Width
1.3 mm
Length
2.9mm
Height
1.04mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


