Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-35 V
Maximum Drain Source Resistance Rds
50Ω
Pin Count
3
Drain Source Current Ids
5 mA
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Width
1.3 mm
Length
2.92mm
Height
0.93mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Stock information temporarily unavailable.
3,359.70 MOP
1.12 MOP Each (On a Reel of 3000) (ex VAT)
3000
3,359.70 MOP
1.12 MOP Each (On a Reel of 3000) (ex VAT)
Stock information temporarily unavailable.
3000
| quantity | Unit price | Per Reel |
|---|---|---|
| 3000 - 3000 | 1.12 MOP | 3,359.74 MOP |
| 6000 - 9000 | 1.086 MOP | 3,258.94 MOP |
| 12000+ | 1.054 MOP | 3,161.16 MOP |
Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-35 V
Maximum Drain Source Resistance Rds
50Ω
Pin Count
3
Drain Source Current Ids
5 mA
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Width
1.3 mm
Length
2.92mm
Height
0.93mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


