Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
350mW
Drain Source Current Ids
2 mA
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
-35 V
Maximum Drain Source Resistance Rds
100Ω
Pin Count
3
Maximum Operating Temperature
150°C
Height
0.93mm
Width
1.3 mm
Length
2.92mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Stock information temporarily unavailable.
46.80 MOP
1.871 MOP Each (In a Pack of 25) (ex VAT)
Standard
25
46.80 MOP
1.871 MOP Each (In a Pack of 25) (ex VAT)
Stock information temporarily unavailable.
Standard
25
| quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 725 | 1.871 MOP | 46.78 MOP |
| 750 - 1475 | 1.822 MOP | 45.55 MOP |
| 1500+ | 1.797 MOP | 44.93 MOP |
Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
350mW
Drain Source Current Ids
2 mA
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
-35 V
Maximum Drain Source Resistance Rds
100Ω
Pin Count
3
Maximum Operating Temperature
150°C
Height
0.93mm
Width
1.3 mm
Length
2.92mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


