Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
JFET
Channel Type
Type N
Maximum Drain Source Voltage Vds
30V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
225mW
Maximum Gate Source Voltage Vgs
-40 V
Pin Count
3
Minimum Operating Temperature
-55°C
Drain Source Current Ids
0.3 to 1.5 mA
Maximum Operating Temperature
150°C
Width
1.3 mm
Height
0.93mm
Length
2.92mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Stock information temporarily unavailable.
45.90 MOP
1.834 MOP Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
25
45.90 MOP
1.834 MOP Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
25
| quantity | Unit price | Per Reel |
|---|---|---|
| 25 - 725 | 1.834 MOP | 45.86 MOP |
| 750 - 1475 | 1.789 MOP | 44.72 MOP |
| 1500+ | 1.76 MOP | 44.00 MOP |
Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
JFET
Channel Type
Type N
Maximum Drain Source Voltage Vds
30V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
225mW
Maximum Gate Source Voltage Vgs
-40 V
Pin Count
3
Minimum Operating Temperature
-55°C
Drain Source Current Ids
0.3 to 1.5 mA
Maximum Operating Temperature
150°C
Width
1.3 mm
Height
0.93mm
Length
2.92mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


