Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Typical Gate Charge @ Vgs
2.5 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
0.94mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
4.30 MOP
2.06 MOP Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
2
4.30 MOP
2.06 MOP Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
2
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 375 - 749 | 2.06 MOP |
| 750+ | 1.96 MOP |
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Typical Gate Charge @ Vgs
2.5 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
0.94mm
Minimum Operating Temperature
-55 °C
Product details


