Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3.2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
2.4 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Height
0.94mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
9.30 MOP
4.53 MOP Each (In a Pack of 2) (ex VAT)
Standard
2
9.30 MOP
4.53 MOP Each (In a Pack of 2) (ex VAT)
Stock information temporarily unavailable.
Standard
2
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 375 - 1874 | 4.53 MOP |
| 1875+ | 3.71 MOP |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3.2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
2.4 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Height
0.94mm
Minimum Operating Temperature
-55 °C
Product details


