Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 (Continuous) A, 15 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-218
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
20
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
0.7mA
Height
20.35mm
Width
4.9mm
Maximum Power Dissipation
80 W
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Maximum Operating Temperature
+150 °C
Length
15.2mm
Base Current
3A
Country of Origin
China
425.00 MOP
14.166 MOP Each (In a Tube of 30) (ex VAT)
30
425.00 MOP
14.166 MOP Each (In a Tube of 30) (ex VAT)
Stock information temporarily unavailable.
30
Stock information temporarily unavailable.
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 120 | 14.166 MOP | 424.98 MOP |
| 150 - 270 | 13.599 MOP | 407.98 MOP |
| 300+ | 13.032 MOP | 390.97 MOP |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 (Continuous) A, 15 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-218
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
20
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
0.7mA
Height
20.35mm
Width
4.9mm
Maximum Power Dissipation
80 W
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Maximum Operating Temperature
+150 °C
Length
15.2mm
Base Current
3A
Country of Origin
China


