ROHM SiC N-Channel MOSFET, 93 A, 650 V, 3-Pin TO-247N SCT3022ALGC11

RS Stock No.: 150-1518Brand: ROHMManufacturers Part No.: SCT3022ALGC11
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Technical Document

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

93 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247N

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

29 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

262 W

Transistor Configuration

Single

Maximum Gate Source Voltage

22 V

Number of Elements per Chip

1

Width

5mm

Length

16mm

Typical Gate Charge @ Vgs

133 nC @ 18 V

Transistor Material

SiC

Maximum Operating Temperature

+175 °C

Height

21mm

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422.00 MOP

421.99 MOP Each (ex VAT)

ROHM SiC N-Channel MOSFET, 93 A, 650 V, 3-Pin TO-247N SCT3022ALGC11

1

Available in multiples of 1
1422.00 MOP
2844.00 MOP
31,266.00 MOP
41,688.00 MOP
52,109.90 MOP
62,531.90 MOP
72,953.90 MOP
83,291.80 MOP
93,703.30 MOP
104,114.80 MOP
114,526.30 MOP
124,937.70 MOP
135,349.20 MOP
145,760.70 MOP
156,076.30 MOP

422.00 MOP

421.99 MOP Each (ex VAT)

ROHM SiC N-Channel MOSFET, 93 A, 650 V, 3-Pin TO-247N SCT3022ALGC11

Stock information temporarily unavailable.

1

Available in multiples of 1
1422.00 MOP
2844.00 MOP
31,266.00 MOP
41,688.00 MOP
52,109.90 MOP
62,531.90 MOP
72,953.90 MOP
83,291.80 MOP
93,703.30 MOP
104,114.80 MOP
114,526.30 MOP
124,937.70 MOP
135,349.20 MOP
145,760.70 MOP
156,076.30 MOP

Stock information temporarily unavailable.

quantityUnit price
1 - 7421.99 MOP
8 - 14411.48 MOP
15+405.09 MOP

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

93 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247N

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

29 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

262 W

Transistor Configuration

Single

Maximum Gate Source Voltage

22 V

Number of Elements per Chip

1

Width

5mm

Length

16mm

Typical Gate Charge @ Vgs

133 nC @ 18 V

Transistor Material

SiC

Maximum Operating Temperature

+175 °C

Height

21mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more