Semikron Danfoss SEMiX303GB12E4p Series IGBT Module, 469 A 1200 V, 11-Pin SEMiX®3p, Through Hole

RS 庫存號: 122-0391品牌: Semikron Danfoss製造商零件號: SEMiX303GB12E4pDistrelec Article No.: 30122437
brand-logo

技術文件

規格

Maximum Continuous Collector Current

469 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

20V

Configuration

Series

Package Type

SEMiX®3p

Mounting Type

Through Hole

Channel Type

N

Pin Count

11

Transistor Configuration

Series

Maximum Operating Temperature

+175 °C

Dimensions

150 x 62.4 x 17mm

Minimum Operating Temperature

-40 °C

Width

62.4mm

產品詳情

SEMiX® Dual IGBT Modules

Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多

2,789.80 MOP

2,789.80 MOP Each (不含稅)

Semikron Danfoss SEMiX303GB12E4p Series IGBT Module, 469 A 1200 V, 11-Pin SEMiX®3p, Through Hole

2,789.80 MOP

2,789.80 MOP Each (不含稅)

Semikron Danfoss SEMiX303GB12E4p Series IGBT Module, 469 A 1200 V, 11-Pin SEMiX®3p, Through Hole

暫時無法取得庫存資訊。

暫時無法取得庫存資訊。

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多

技術文件

規格

Maximum Continuous Collector Current

469 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

20V

Configuration

Series

Package Type

SEMiX®3p

Mounting Type

Through Hole

Channel Type

N

Pin Count

11

Transistor Configuration

Series

Maximum Operating Temperature

+175 °C

Dimensions

150 x 62.4 x 17mm

Minimum Operating Temperature

-40 °C

Width

62.4mm

產品詳情

SEMiX® Dual IGBT Modules

Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多