Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
800 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.4 x 4.6 x 15.75mm
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Stock information temporarily unavailable.
362.20 MOP
7.244 MOP Each (In a Tube of 50) (ex VAT)
50
362.20 MOP
7.244 MOP Each (In a Tube of 50) (ex VAT)
Stock information temporarily unavailable.
50
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | 7.244 MOP | 362.22 MOP |
| 100 - 150 | 7.028 MOP | 351.40 MOP |
| 200+ | 6.816 MOP | 340.79 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
800 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.4 x 4.6 x 15.75mm
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


