Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
85 W
Minimum DC Current Gain
5
Transistor Configuration
Single
Maximum Collector Base Voltage
800 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Stock information temporarily unavailable.
357.10 MOP
7.141 MOP Each (In a Tube of 50) (ex VAT)
50
357.10 MOP
7.141 MOP Each (In a Tube of 50) (ex VAT)
Stock information temporarily unavailable.
50
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | 7.141 MOP | 357.07 MOP |
| 100 - 150 | 6.987 MOP | 349.34 MOP |
| 200+ | 6.83 MOP | 341.51 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
85 W
Minimum DC Current Gain
5
Transistor Configuration
Single
Maximum Collector Base Voltage
800 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


