Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
108 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
385 W
Package Type
H²PAK-7
Mounting Type
Surface Mount
Pin Count
7
Country of Origin
China
27.60 MOP
27.62 MOP Each (ex VAT)
STMicroelectronics GH50H65DRB2-7AG IGBT, 108 A 650 V, 7-Pin H2PAK-7, Surface Mount
Select packaging type
Standard
1
27.60 MOP
27.62 MOP Each (ex VAT)
STMicroelectronics GH50H65DRB2-7AG IGBT, 108 A 650 V, 7-Pin H2PAK-7, Surface Mount
Stock information temporarily unavailable.
Select packaging type
Standard
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 9 | 27.62 MOP |
| 10 - 99 | 24.88 MOP |
| 100 - 499 | 22.94 MOP |
| 500 - 999 | 21.22 MOP |
| 1000+ | 19.05 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
108 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
385 W
Package Type
H²PAK-7
Mounting Type
Surface Mount
Pin Count
7
Country of Origin
China


