Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK-7
Series
SCT
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
29mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
48.6nC
Forward Voltage Vf
2.9V
Maximum Operating Temperature
175°C
Width
10.4 mm
Height
4.8mm
Length
15.25mm
Standards/Approvals
RoHS, AEC-Q101
Automotive Standard
AEC-Q101
Country of Origin
China
Stock information temporarily unavailable.
211.90 MOP
211.87 MOP Each (ex VAT)
Standard
1
211.90 MOP
211.87 MOP Each (ex VAT)
Stock information temporarily unavailable.
Standard
1
| quantity | Unit price |
|---|---|
| 1 - 9 | 211.87 MOP |
| 10 - 99 | 190.64 MOP |
| 100+ | 175.80 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK-7
Series
SCT
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
29mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
48.6nC
Forward Voltage Vf
2.9V
Maximum Operating Temperature
175°C
Width
10.4 mm
Height
4.8mm
Length
15.25mm
Standards/Approvals
RoHS, AEC-Q101
Automotive Standard
AEC-Q101
Country of Origin
China


