STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

RS Stock No.: 201-4415Brand: STMicroelectronicsManufacturers Part No.: SCT20N120H
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

1200 V

Series

SiC MOSFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.203 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

239V

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

113,053.80 MOP

113.054 MOP Each (On a Reel of 1000) (ex VAT)

STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

1000

Available in multiples of 1000
1000113,053.80 MOP
2000226,107.60 MOP
3000339,161.40 MOP
4000452,215.10 MOP
5000553,963.30 MOP
6000664,756.00 MOP
7000775,548.60 MOP
8000886,341.30 MOP
9000997,134.00 MOP
100001,107,926.60 MOP
110001,218,719.30 MOP
120001,329,511.90 MOP
130001,440,304.60 MOP
140001,551,097.30 MOP
150001,661,889.90 MOP

113,053.80 MOP

113.054 MOP Each (On a Reel of 1000) (ex VAT)

STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000113,053.80 MOP
2000226,107.60 MOP
3000339,161.40 MOP
4000452,215.10 MOP
5000553,963.30 MOP
6000664,756.00 MOP
7000775,548.60 MOP
8000886,341.30 MOP
9000997,134.00 MOP
100001,107,926.60 MOP
110001,218,719.30 MOP
120001,329,511.90 MOP
130001,440,304.60 MOP
140001,551,097.30 MOP
150001,661,889.90 MOP

quantityUnit pricePer Reel
1000 - 4000113.054 MOP113,053.78 MOP
5000+110.793 MOP110,792.66 MOP

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

1200 V

Series

SiC MOSFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.203 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

239V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more