Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
650 V
Series
SCTWA35N65G2V
Package Type
Hip247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.072 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
Stock information temporarily unavailable.
3,695.00 MOP
123.165 MOP Each (In a Tube of 30) (ex VAT)
30
3,695.00 MOP
123.165 MOP Each (In a Tube of 30) (ex VAT)
Stock information temporarily unavailable.
30
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 120 | 123.165 MOP | 3,694.96 MOP |
| 150+ | 120.699 MOP | 3,620.97 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
650 V
Series
SCTWA35N65G2V
Package Type
Hip247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.072 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China


