Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Transistor
Channel Type
P-Channel
Maximum Continuous Drain Current Id
29A
Maximum Drain Source Voltage Vds
700V
Package Type
PowerFLAT
Series
G-HEMT
Mount Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance Rds
80mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
6.2nC
Maximum Power Dissipation Pd
188W
Maximum Gate Source Voltage Vgs
-6 to 7 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Width
8.1 mm
Length
8.1mm
Height
0.9mm
Country of Origin
China
Stock information temporarily unavailable.
33.20 MOP
33.18 MOP Each (ex VAT)
1
33.20 MOP
33.18 MOP Each (ex VAT)
Stock information temporarily unavailable.
1
| quantity | Unit price |
|---|---|
| 1 - 9 | 33.18 MOP |
| 10 - 24 | 29.15 MOP |
| 25 - 99 | 26.27 MOP |
| 100 - 499 | 21.32 MOP |
| 500+ | 20.74 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Transistor
Channel Type
P-Channel
Maximum Continuous Drain Current Id
29A
Maximum Drain Source Voltage Vds
700V
Package Type
PowerFLAT
Series
G-HEMT
Mount Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance Rds
80mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
6.2nC
Maximum Power Dissipation Pd
188W
Maximum Gate Source Voltage Vgs
-6 to 7 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Width
8.1 mm
Length
8.1mm
Height
0.9mm
Country of Origin
China


