STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
MDmesh DM2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
90W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20nC
Maximum Operating Temperature
150°C
Length
9.35mm
Standards/Approvals
No
Width
10.4 mm
Height
4.6mm
Automotive Standard
No
Country of Origin
China
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
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Stock information temporarily unavailable.
14,014.80 MOP
14.015 MOP Each (On a Reel of 1000) (ex VAT)
1000
14,014.80 MOP
14.015 MOP Each (On a Reel of 1000) (ex VAT)
Stock information temporarily unavailable.
1000
| quantity | Unit price | Per Reel |
|---|---|---|
| 1000 - 4000 | 14.015 MOP | 14,014.80 MOP |
| 5000+ | 13.735 MOP | 13,734.50 MOP |
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Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
MDmesh DM2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
90W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20nC
Maximum Operating Temperature
150°C
Length
9.35mm
Standards/Approvals
No
Width
10.4 mm
Height
4.6mm
Automotive Standard
No
Country of Origin
China
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products