Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-252
Series
STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
30W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6.4nC
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
175°C
Width
7.45 mm
Height
2.38mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
12,253.90 MOP
4.902 MOP Each (On a Reel of 2500) (ex VAT)
2500
12,253.90 MOP
4.902 MOP Each (On a Reel of 2500) (ex VAT)
Stock information temporarily unavailable.
2500
| quantity | Unit price | Per Reel |
|---|---|---|
| 2500 - 2500 | 4.902 MOP | 12,253.88 MOP |
| 5000 - 7500 | 4.803 MOP | 12,008.73 MOP |
| 10000+ | 4.707 MOP | 11,768.72 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-252
Series
STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
30W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6.4nC
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
175°C
Width
7.45 mm
Height
2.38mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


