STMicroelectronics STGF6NC60HD IGBT, 6 A 600 V, 3-Pin TO-220FP, Through Hole
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
20 W
Package Type
TO-220FP
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 16.4mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
364.00 MOP
7.279 MOP Each (In a Tube of 50) (ex VAT)
50
364.00 MOP
7.279 MOP Each (In a Tube of 50) (ex VAT)
Stock information temporarily unavailable.
50
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | 7.279 MOP | 363.97 MOP |
| 100 - 150 | 7.123 MOP | 356.14 MOP |
| 200+ | 6.962 MOP | 348.10 MOP |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
20 W
Package Type
TO-220FP
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 16.4mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products