Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Series
DeepGate, STripFET
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
117 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
10.57mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.8mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
126.50 MOP
61.73 MOP Each (In a Pack of 2) (ex VAT)
Standard
2
126.50 MOP
61.73 MOP Each (In a Pack of 2) (ex VAT)
Stock information temporarily unavailable.
Standard
2
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 125 - 249 | 61.73 MOP |
| 250+ | 60.70 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Series
DeepGate, STripFET
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
117 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
10.57mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.8mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


