STMicroelectronics MDmesh M2 N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220 STP18N65M2
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Width
4.6mm
Forward Diode Voltage
1.6V
Height
15.75mm
Country of Origin
China
Product details
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
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Stock information temporarily unavailable.
99.50 MOP
19.909 MOP Each (In a Pack of 5) (ex VAT)
Standard
5
99.50 MOP
19.909 MOP Each (In a Pack of 5) (ex VAT)
Stock information temporarily unavailable.
Standard
5
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | 19.909 MOP | 99.55 MOP |
| 25 - 120 | 19.415 MOP | 97.07 MOP |
| 125 - 245 | 18.941 MOP | 94.70 MOP |
| 250 - 995 | 18.467 MOP | 92.33 MOP |
| 1000+ | 17.972 MOP | 89.86 MOP |
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Width
4.6mm
Forward Diode Voltage
1.6V
Height
15.75mm
Country of Origin
China
Product details
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products