Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.1V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
183nC
Maximum Operating Temperature
175°C
Width
4.6 mm
Standards/Approvals
No
Height
15.75mm
Length
10.4mm
Automotive Standard
No
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
42.20 MOP
42.17 MOP Each (ex VAT)
Standard
1
42.20 MOP
42.17 MOP Each (ex VAT)
Stock information temporarily unavailable.
Standard
1
| quantity | Unit price |
|---|---|
| 1 - 12 | 42.17 MOP |
| 13 - 24 | 41.11 MOP |
| 25+ | 40.49 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.1V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
183nC
Maximum Operating Temperature
175°C
Width
4.6 mm
Standards/Approvals
No
Height
15.75mm
Length
10.4mm
Automotive Standard
No
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


