Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
1500 V
Package Type
TO-220
Series
MDmesh
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
30 nC @ 10 V
Width
4.6mm
Height
15.75mm
Product details
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
47.40 MOP
47.40 MOP Each (ex VAT)
Standard
1
47.40 MOP
47.40 MOP Each (ex VAT)
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 12 | 47.40 MOP |
| 13 - 24 | 46.17 MOP |
| 25+ | 45.45 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
1500 V
Package Type
TO-220
Series
MDmesh
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
30 nC @ 10 V
Width
4.6mm
Height
15.75mm
Product details


