Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Package Type
TO-220
Series
STripFET II
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
6.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
142 nC @ 10 V
Width
4.6mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
46.70 MOP
23.341 MOP Each (In a Pack of 2) (ex VAT)
Standard
2
46.70 MOP
23.341 MOP Each (In a Pack of 2) (ex VAT)
Stock information temporarily unavailable.
Standard
2
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 12 | 23.341 MOP | 46.68 MOP |
| 14 - 24 | 22.774 MOP | 45.55 MOP |
| 26+ | 22.413 MOP | 44.83 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Package Type
TO-220
Series
STripFET II
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
6.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
142 nC @ 10 V
Width
4.6mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


