Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Maximum Gate Source Voltage Vgs
15 V
Typical Gate Charge Qg @ Vgs
15nC
Minimum Operating Temperature
150°C
Maximum Operating Temperature
-55°C
Transistor Configuration
Isolated
Width
4 mm
Length
5mm
Standards/Approvals
No
Height
1.25mm
Number of Elements per Chip
2
Distrelec Product Id
304-42-969
Automotive Standard
No
Product details
N-Channel STripFET™ Dual MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
81.90 MOP
16.385 MOP Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
5
81.90 MOP
16.385 MOP Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
5
| quantity | Unit price | Per Reel |
|---|---|---|
| 5 - 620 | 16.385 MOP | 81.92 MOP |
| 625 - 1245 | 15.952 MOP | 79.76 MOP |
| 1250+ | 15.725 MOP | 78.63 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Maximum Gate Source Voltage Vgs
15 V
Typical Gate Charge Qg @ Vgs
15nC
Minimum Operating Temperature
150°C
Maximum Operating Temperature
-55°C
Transistor Configuration
Isolated
Width
4 mm
Length
5mm
Standards/Approvals
No
Height
1.25mm
Number of Elements per Chip
2
Distrelec Product Id
304-42-969
Automotive Standard
No
Product details
N-Channel STripFET™ Dual MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


