STMicroelectronics MDmesh DM2 N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STW28N60DM2

RS 庫存號: 168-5897品牌: STMicroelectronics製造商零件號: STW28N60DM2
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技術文件

規格

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

MDmesh DM2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Length

15.75mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.15mm

Height

20.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

原產地

China

產品詳情

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

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22,277.30 MOP

Each (In a Tube of 30) (不含稅)

STMicroelectronics MDmesh DM2 N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STW28N60DM2

30

可用的倍數 30
3022,277.30 MOP
6044,554.70 MOP
9066,832.00 MOP
12089,109.40 MOP
150111,386.70 MOP
180133,664.10 MOP
210155,941.40 MOP
240178,218.80 MOP
270200,496.10 MOP
300222,773.50 MOP
330245,050.80 MOP
360267,328.20 MOP
390289,605.50 MOP
420311,882.90 MOP
450334,160.20 MOP

22,277.30 MOP

Each (In a Tube of 30) (不含稅)

STMicroelectronics MDmesh DM2 N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STW28N60DM2

暫時無法取得庫存資訊。

30

可用的倍數 30
3022,277.30 MOP
6044,554.70 MOP
9066,832.00 MOP
12089,109.40 MOP
150111,386.70 MOP
180133,664.10 MOP
210155,941.40 MOP
240178,218.80 MOP
270200,496.10 MOP
300222,773.50 MOP
330245,050.80 MOP
360267,328.20 MOP
390289,605.50 MOP
420311,882.90 MOP
450334,160.20 MOP

暫時無法取得庫存資訊。

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多

技術文件

規格

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

MDmesh DM2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Length

15.75mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.15mm

Height

20.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

原產地

China

產品詳情

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多