Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
FDmesh
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
80.4 nC @ 10 V
Height
20.15mm
Product details
N-Channel FDmesh™ Power MOSFET, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
83.60 MOP
83.57 MOP Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
1
83.60 MOP
83.57 MOP Each (Supplied in a Tube) (ex VAT)
Stock information temporarily unavailable.
Production pack (Tube)
1
| quantity | Unit price |
|---|---|
| 1 - 7 | 83.57 MOP |
| 8 - 14 | 81.51 MOP |
| 15+ | 80.17 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
FDmesh
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
80.4 nC @ 10 V
Height
20.15mm
Product details


