Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-247
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
210W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
54nC
Forward Voltage Vf
-6.3V
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
83.20 MOP
41.581 MOP Each (In a Pack of 2) (ex VAT)
Standard
2
83.20 MOP
41.581 MOP Each (In a Pack of 2) (ex VAT)
Stock information temporarily unavailable.
Standard
2
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 6 | 41.581 MOP | 83.16 MOP |
| 8 - 14 | 40.55 MOP | 81.10 MOP |
| 16+ | 39.932 MOP | 79.86 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-247
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
210W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
54nC
Forward Voltage Vf
-6.3V
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified


