Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
50A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-247
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
60mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
360W
Maximum Gate Source Voltage Vgs
25 V
Typical Gate Charge Qg @ Vgs
90nC
Forward Voltage Vf
-5.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
2,401.50 MOP
80.049 MOP Each (In a Tube of 30) (ex VAT)
30
2,401.50 MOP
80.049 MOP Each (In a Tube of 30) (ex VAT)
Stock information temporarily unavailable.
30
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 30 | 80.049 MOP | 2,401.48 MOP |
| 60 - 270 | 78.308 MOP | 2,349.23 MOP |
| 300+ | 75.958 MOP | 2,278.74 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
50A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-247
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
60mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
360W
Maximum Gate Source Voltage Vgs
25 V
Typical Gate Charge Qg @ Vgs
90nC
Forward Voltage Vf
-5.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified


