Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Transistor
Maximum DC Collector Current Idc
25A
Maximum Collector Emitter Voltage Vceo
100V
Package Type
TO-247
Mount Type
Through Hole
Transistor Configuration
Single
Maximum Collector Base Voltage VCBO
100V
Maximum Power Dissipation Pd
125W
Transistor Polarity
NPN
Minimum DC Current Gain hFE
10
Maximum Emitter Base Voltage VEBO
5V
Maximum Transition Frequency ft
3MHz
Pin Count
3
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
34.95mm
Length
15.75mm
Standards/Approvals
No
Series
TIP35C
Automotive Standard
No
Country of Origin
China
Product details
TIP35C/ TIP36C Complementary power transistors
ST Microelectronics presents its TIP35C/ TIP36C series of complementary power transistors. This type of transistor is designed for general purpose power amplification and switching such as output or driver stages. The TIP35C/ TIP36C series are specially manufactured in planar technology with base island layout, this results in the transistors showing exceptionally high gain performance whilst also having a very low saturation voltage.
Features and Benefits
- Low collector-emitter saturation voltage
- Complementary NPN - PNP transistors
Applications
- General purpose
- Audio amplifier
- Switching regulators, converters and power amplifiers
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Stock information temporarily unavailable.
20.20 MOP
20.20 MOP Each (ex VAT)
1
20.20 MOP
20.20 MOP Each (ex VAT)
Stock information temporarily unavailable.
1
| quantity | Unit price |
|---|---|
| 1 - 4 | 20.20 MOP |
| 5+ | 16.59 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Transistor
Maximum DC Collector Current Idc
25A
Maximum Collector Emitter Voltage Vceo
100V
Package Type
TO-247
Mount Type
Through Hole
Transistor Configuration
Single
Maximum Collector Base Voltage VCBO
100V
Maximum Power Dissipation Pd
125W
Transistor Polarity
NPN
Minimum DC Current Gain hFE
10
Maximum Emitter Base Voltage VEBO
5V
Maximum Transition Frequency ft
3MHz
Pin Count
3
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
34.95mm
Length
15.75mm
Standards/Approvals
No
Series
TIP35C
Automotive Standard
No
Country of Origin
China
Product details
TIP35C/ TIP36C Complementary power transistors
ST Microelectronics presents its TIP35C/ TIP36C series of complementary power transistors. This type of transistor is designed for general purpose power amplification and switching such as output or driver stages. The TIP35C/ TIP36C series are specially manufactured in planar technology with base island layout, this results in the transistors showing exceptionally high gain performance whilst also having a very low saturation voltage.
Features and Benefits
- Low collector-emitter saturation voltage
- Complementary NPN - PNP transistors
Applications
- General purpose
- Audio amplifier
- Switching regulators, converters and power amplifiers
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


