Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
25 V
Series
NexFET
Package Type
WSON
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.55V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Width
2mm
Length
2mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
0.8mm
Country of Origin
Malaysia
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Stock information temporarily unavailable.
6,036.60 MOP
2.012 MOP Each (On a Reel of 3000) (ex VAT)
3000
6,036.60 MOP
2.012 MOP Each (On a Reel of 3000) (ex VAT)
Stock information temporarily unavailable.
3000
| quantity | Unit price | Per Reel |
|---|---|---|
| 3000 - 3000 | 2.012 MOP | 6,036.56 MOP |
| 6000 - 9000 | 1.972 MOP | 5,915.89 MOP |
| 12000+ | 1.913 MOP | 5,738.44 MOP |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
25 V
Series
NexFET
Package Type
WSON
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.55V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Width
2mm
Length
2mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
0.8mm
Country of Origin
Malaysia
Product details


