Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Length
5.8mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Stock information temporarily unavailable.
65.80 MOP
13.17 MOP Each (In a Pack of 5) (ex VAT)
Standard
5
65.80 MOP
13.17 MOP Each (In a Pack of 5) (ex VAT)
Stock information temporarily unavailable.
Standard
5
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 620 | 13.17 MOP | 65.85 MOP |
| 625 - 1245 | 12.861 MOP | 64.30 MOP |
| 1250+ | 12.655 MOP | 63.27 MOP |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Length
5.8mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details


