Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 SSM3J334R,LF(T

RS Stock No.: 144-5260Brand: ToshibaManufacturers Part No.: SSM3J334R,LF(T
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Width

1.8mm

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.8mm

Country of Origin

Japan

Product details

MOSFET P-Channel, SSM3J Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

1,743.60 MOP

Each (In a Pack of 30) (ex VAT)

Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 SSM3J334R,LF(T

30

Available in multiples of 30
301,743.60 MOP
603,487.20 MOP
905,230.80 MOP
1206,974.40 MOP
1508,718.00 MOP
18010,461.60 MOP
21012,205.20 MOP
24013,948.80 MOP
27015,692.50 MOP
30017,436.10 MOP
33019,179.70 MOP
36020,923.30 MOP
39022,666.90 MOP
42024,410.50 MOP
45026,154.10 MOP

1,743.60 MOP

Each (In a Pack of 30) (ex VAT)

Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 SSM3J334R,LF(T

Stock information temporarily unavailable.

30

Available in multiples of 30
301,743.60 MOP
603,487.20 MOP
905,230.80 MOP
1206,974.40 MOP
1508,718.00 MOP
18010,461.60 MOP
21012,205.20 MOP
24013,948.80 MOP
27015,692.50 MOP
30017,436.10 MOP
33019,179.70 MOP
36020,923.30 MOP
39022,666.90 MOP
42024,410.50 MOP
45026,154.10 MOP

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Width

1.8mm

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.8mm

Country of Origin

Japan

Product details

MOSFET P-Channel, SSM3J Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more