Toshiba U-MOSVIII-H N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1,S1X(S
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
15.1mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
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372.50 MOP
74.51 MOP Each (In a Pack of 5) (ex VAT)
5
372.50 MOP
74.51 MOP Each (In a Pack of 5) (ex VAT)
Stock information temporarily unavailable.
5
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 5 - 9 | 74.51 MOP |
| 10 - 24 | 72.55 MOP |
| 25 - 49 | 70.80 MOP |
| 50+ | 69.04 MOP |
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
15.1mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products