Toshiba DTMOSIV N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220SIS
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Forward Diode Voltage
1.7V
Height
15mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
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200.90 MOP
40.19 MOP Each (In a Pack of 5) (ex VAT)
5
200.90 MOP
40.19 MOP Each (In a Pack of 5) (ex VAT)
Stock information temporarily unavailable.
5
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 5 - 9 | 40.19 MOP |
| 10 - 24 | 39.16 MOP |
| 25 - 49 | 38.23 MOP |
| 50+ | 37.20 MOP |
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220SIS
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Forward Diode Voltage
1.7V
Height
15mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products