Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
440 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
6.1mm
Length
6.6mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Forward Diode Voltage
1.7V
Height
2.3mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
296.80 MOP
59.36 MOP Each (In a Pack of 5) (ex VAT)
5
296.80 MOP
59.36 MOP Each (In a Pack of 5) (ex VAT)
Stock information temporarily unavailable.
5
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 5 - 9 | 59.36 MOP |
| 10 - 49 | 57.91 MOP |
| 50 - 99 | 56.47 MOP |
| 100+ | 55.03 MOP |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
440 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
6.1mm
Length
6.6mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Forward Diode Voltage
1.7V
Height
2.3mm
Country of Origin
Japan
Product details


