Toshiba DTMOSIV N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK TK14G65W,RQ(S

RS Stock No.: 133-2797Brand: ToshibaManufacturers Part No.: TK14G65W,RQ(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

13.7 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

35 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

8.8mm

Length

10.35mm

Forward Diode Voltage

1.7V

Height

4.46mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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506.40 MOP

101.28 MOP Each (In a Pack of 5) (ex VAT)

Toshiba DTMOSIV N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK TK14G65W,RQ(S

5

Available in multiples of 5
5506.40 MOP
10987.40 MOP
151,481.10 MOP
201,974.90 MOP
252,468.60 MOP
302,962.30 MOP
353,456.00 MOP
403,949.70 MOP
454,443.40 MOP
504,814.00 MOP
555,295.40 MOP
605,776.80 MOP
656,258.20 MOP
706,739.60 MOP
757,221.00 MOP

506.40 MOP

101.28 MOP Each (In a Pack of 5) (ex VAT)

Toshiba DTMOSIV N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK TK14G65W,RQ(S

Stock information temporarily unavailable.

5

Available in multiples of 5
5506.40 MOP
10987.40 MOP
151,481.10 MOP
201,974.90 MOP
252,468.60 MOP
302,962.30 MOP
353,456.00 MOP
403,949.70 MOP
454,443.40 MOP
504,814.00 MOP
555,295.40 MOP
605,776.80 MOP
656,258.20 MOP
706,739.60 MOP
757,221.00 MOP

Stock information temporarily unavailable.

quantityUnit price
5 - 9101.28 MOP
10 - 4998.74 MOP
50 - 9996.28 MOP
100+93.89 MOP

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

13.7 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

35 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

8.8mm

Length

10.35mm

Forward Diode Voltage

1.7V

Height

4.46mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more