Toshiba DTMOSIV N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W5,S1VF(S

RS Stock No.: 125-0551Brand: ToshibaManufacturers Part No.: TK20N60W5,S1VF(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.02mm

Length

15.94mm

Forward Diode Voltage

1.7V

Height

20.95mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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595.30 MOP

119.05 MOP Each (In a Pack of 5) (ex VAT)

Toshiba DTMOSIV N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W5,S1VF(S

5

Available in multiples of 5
5595.30 MOP
101,160.90 MOP
151,741.30 MOP
202,321.70 MOP
252,829.80 MOP
303,395.70 MOP
353,961.70 MOP
404,527.60 MOP
455,093.60 MOP
505,518.30 MOP
556,070.20 MOP
606,622.00 MOP
657,173.80 MOP
707,725.70 MOP
758,277.50 MOP

595.30 MOP

119.05 MOP Each (In a Pack of 5) (ex VAT)

Toshiba DTMOSIV N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W5,S1VF(S

Stock information temporarily unavailable.

5

Available in multiples of 5
5595.30 MOP
101,160.90 MOP
151,741.30 MOP
202,321.70 MOP
252,829.80 MOP
303,395.70 MOP
353,961.70 MOP
404,527.60 MOP
455,093.60 MOP
505,518.30 MOP
556,070.20 MOP
606,622.00 MOP
657,173.80 MOP
707,725.70 MOP
758,277.50 MOP

Stock information temporarily unavailable.

quantityUnit price
5 - 9119.05 MOP
10 - 24116.09 MOP
25 - 49113.19 MOP
50+110.37 MOP

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.02mm

Length

15.94mm

Forward Diode Voltage

1.7V

Height

20.95mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more