Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30.8 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
230 W
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.7V
Height
15.1mm
Country of Origin
Japan
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
107.60 MOP
52.45 MOP Each (In a Pack of 2) (ex VAT)
2
107.60 MOP
52.45 MOP Each (In a Pack of 2) (ex VAT)
Stock information temporarily unavailable.
2
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 5 - 9 | 52.45 MOP |
| 10 - 24 | 51.11 MOP |
| 25 - 49 | 49.88 MOP |
| 50+ | 48.64 MOP |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30.8 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
230 W
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.7V
Height
15.1mm
Country of Origin
Japan
Product details


