Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
SC-70-6L
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Number of Elements per Chip
1
Width
1.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Country of Origin
China
577.50 MOP
56.32 MOP Each (In a Pack of 10) (ex VAT)
Standard
10
577.50 MOP
56.32 MOP Each (In a Pack of 10) (ex VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 75 - 149 | 56.32 MOP |
| 150+ | 55.45 MOP |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
SC-70-6L
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Number of Elements per Chip
1
Width
1.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Country of Origin
China


